Low Voltage Mosfet

V(BR)DSS

30V

RDS(ON)

5.8mΩ(max.)

ID

100A

Parameter

Symbol

Max.

Unit

Drain-Source Voltage

VDS

30

V

Gate-to-Source Voltage

VGS

+ 20

V

Continuous Drain Current, @ Steady-State 1

ID @ TC = 25^oC

100

A

Continuous Drain Current, @ Steady-State

ID @ TC = 100^oC

68

A

Pulsed Drain Current 2

IDM

400

A

Power Dissipation

PD @TA = 25^oC

83

W

PD @TA = 100^oC

37.8

Linear Derating Factor

T_A = 25^oC

0.66

W/^oC

Single Pulse Avalanche Energy3

E_AS

780

mJ

Junction-to-Case

R_θJC

0.6

^oC/W

Junction-to-Ambient (PCB Mounted, Steady-State) 4

R_θJA

62.5

^oC/W

Operating Junction and Storage Temperature Range

T_J /T_STG

-55 to + 150

^oC

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250μA

30

-

-

V

Drain-to-Source Leakage Current

IDSS

VDS=30V, VGS=0V

-

-

1

uA

TJ=125^oC

-

-

50

Gate-to-Source Forward Leakage IGSS

IGSS

VGS =20V

-

-

100

nA

VGS =-20V

-

-

-100

Static Drain-to-Source On- Resistance

RDS (on)

VGS=10V, ID=50A

-

4.3

5.8

mΩ

VGS=4.5V, ID=15A

-

5.2

7.5

Gate Resistance

Rg

f-1MHz

-

1.8

-

Ω

Gate Threshold Voltage

VGS (th)

VDS=VGS, ID=250uA

1.0

1.6

2.6

V

Input Capacitance

Ciss

VGS=0V, VDS=5V
f=1MHz

-

2180

-

pF

Output Capacitance

Coss

-

270

-

Reverse transfer capacitance

Crss

-

210

-

Total Gate Charge

Qg

ID=30A, VDS=24V, VGS=10V

-

47.2

-

nC

Gate-to-Source Charge

Qgs

-

8.8

-

Gate-to-Drain("Miller") Charge

Qgd

-

9.6

-

Turn-on Delay Time

td (on)

VGS=4.5V, VDD=20V,

ID=60A, RGEN=1.8Ω

-

12.3

-

nS

Rise Time

tr

-

87.3

-

Turn-Off Delay Time

td (off)

-

140

-

Fall Time

tf

-

82.4

-

Source-Drain Ratings and Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max

Unit

Continuous Source Current

(Body Diode)

Is

MOSFET symbol showing

the integral reverse

p-n junction diode.

-

-

100

A

Pulsed Source Current (Body Diode)

Ism

-

-

400

A

Diode Forward Voltage

VSD

IS=20A, VGS=0V

-

0.9

1.2

V

Reverse Recovery Time

trr

TJ = 25^oC, IF =30A, di/dt =

100A/μs

-

16.5

-

ns

Reverse Recovery Charge

Qrr

-

6.5

-

uC