High Voltage Cool Mosfet

1.00 - 10.00 USD ($)/Piece

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High Voltage Cool Mosfet Price And Quantity

Minimum Order Quantity 10 Piece
Price Range 1.00 - 10.00 USD ($)/Piece

High Voltage Cool Mosfet Trade Information

Supply Ability 20000 Piece Per Month
Delivery Time 7-15 Days

Product Description

Rongtech has series Multi-EPI Super-Junction power MOSFET platforms for voltage up 500V to 1000 volts, both with design service and manufacturing capability, including cell, termination design and simulation

The RTW600V 77A power MOSFET is a Low voltage N channel Multi-EPI Super-Junction power MOSFET sample with advanced technology to have better characteristics, such as fast switching time, low Ciss and Crss, low on resistance and excellent avalanche characteristics, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features of High Voltage Cool Mosfet

New revolutionary high voltage technology
Better RDS(on) in TO-247 •Ultra Low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Intrinsc fast-recovery body diode
Pb-free lead planting
RDS(ON)=0.041Ω @VGS = 10V VDS = 600V ID (@ VGS=10V) = 35A

APPLICATIONS

Consumer
EV Charger
PFC stages for server & telecom
SMPS
UPS
Solar
Lighting

Maximum rating sat Tj = 25 ℃ , Unlessotherwise specified.

Symbol	Parameter	RTW77N60SD	Unit
VDSS	Drain-Source Voltage	600	V
ID	Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)	77* 45*	A
IDM	Drain Current - Pulsed (Note 1)	260	A
VGSS	Gate-Source voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1950	mJ
IAR	Repetitive Avalanche Current (Note 1)	13	A
EAR	Repetitive Avalanche Energy (Note 1)	2.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	15	V/ns
dVds/dt	Drain Source voltage slope (Vds=480V)	50	V/ns
PD	Power Dissipation (TC = 25℃)	400	W
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	℃
TL	Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds	300	℃

Thermal Characteristics

Symbol	Parameter	RTW77N60SD	Unit
RθJC	Thermal Resistance, Junction-to-Case	0.32	℃/W
RθCS	Thermal Resistance, Case-to-Sink Typ.	0.5	℃/W
RθJA	Thermal Resistance, Junction-to-Ambient	62	℃/W