Features
Absolute Maximum Ratings
Parameter | Symbol | Test Conditions | Values | Units |
Repetitive peak reverse voltage | VRRM | | 200 | V |
Continuous forward current | IF(AV) | TC =110°C | 80 | A |
Single pulse forward current | IFSM | TC =25°C | 800 | |
Maximum repetitive forward current | IFRM | Square wave, 20kHZ | 280 | |
Operating junction | Tj | | 175 | °C |
Storage temperatures | Tstg | | -55 to +175 | °C |
Electrical characteristics (Ta=25°C unless otherwise specified)
Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
Breakdown voltage Blocking voltage | VBR,VR | IR=100µA | 200 | | | |
Forward voltage (Per Diode) | VF | IF=40 A | | 0.95 | 1.20 | V |
IF=40 A, Tj =125°C | | 0.85 | 1.10 | |||
Reverse leakage current(Per Diode) | IR | VR= 200V | | | 30 | µA |
Tj=150°C, VR=200V | | | 300 | |||
Reverse recovery time(Per Diode) | trr | IF=0.5A, IR=1A, IRR=0.25A | | | 45 | ns |
IF=1A,VR=30V, di/dt =200A/us | | 25 | 35 |
Thermal characteristics
Symbol | Parameter | Typ. | Max. | Units |
RθJC | Junction-to-Case | - | 0.80 | ℃/W |