Discrete IGBTs

1.00 - 10.00 USD ($)/Piece

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Discrete IGBTs Price And Quantity

Price Range 1.00 - 10.00 USD ($)/Piece
Minimum Order Quantity 10000 Piece

Discrete IGBTs Trade Information

Supply Ability 20000 Piece Per Month
Delivery Time 7-15 Days
Main Export Market(s) Asia, Australia, Central America, North America, South America, Eastern Europe, Western Europe, Middle East, Africa

Product Description

Symbolic to all the success that we have gained in the industry, remains our status as the leading trader and supplier of an interesting range of Discrete IGBTs. They find their applications in industrial, traction, energy and automotive markets. This Discrete IGBTs provides an integrated solution with low insertion loss and low power dissipation than shunt solution. The provided load cell is very popular in the market for featuring variegated attributes such as easy installation, compact design, accurate result and user-friendly interface.

Maximum Rating

Parameter	Symbol	Value	unit
Collector- Emitter Breakdown voltage	V_CE	1200	V
DC collector current, limited by T_jmax T_c=25Â°C T_c=100Â°C	I_c	80 40	A
Diode forward current, limited by T_jmax Tc=25Â°C Tc=100Â°C	I_F	80 40	A
Continuous gate- emitter voltage	V_CE	Â±20	V
Transient gate- emitter voltage	V_CE	Â±30	V
Turn off safe operating area V_CEâ‰¤1200V,T_j â‰¤ 150Â°C		160	A
Pulsed collector current V_CE =15V, tP limited by Tjmax	I_CM	160	A
Diode pulse current tP limited by T_jmax	IF_puls	10	Âµs
Short circuit withstand time, V_CE=15V, â‰¤600 V	T_sc	417	W
Power dissipation ,T_j= 25Â°C	P_tot	-40...+150	Â°C
Operating temperature	T_j	-55...+150	Â°C
Storage temperature	T_s	260	Â°C

Thermal Resistance

Parameter	Symbol	Max. value	Unit
IGBT thermal resistance, junction â€“ case	R₀(j-c)	0.3	K/W
Diode thermal	R₀(j-c)	0.6	K/W
Thermal resistance, junction â€“ case	R₀(j-a)	40	K/W

Electrical Characteristic of the IGBT

Parameter	Symbol	Condition	Min.	Typ.	Max.	Unit
Static
Collector â€“ Emitter breakdown voltage	BVCES	VGE=0V,Ic=250ÂµA	1200	1300	-	V
Gate threshold voltage	VGE(th)	VGE=VGE,Ic= 250ÂµA	5.1	5.8	6.4	V
Collector â€“ Emitter saturation voltage	VCE(sat)	VGE=15V, Ic =40A Tj=25Â°C Tj=150Â°C	- -	2.0 2.5	2.5 -	V
Zero gate voltage Collector current	ICES	VCE=1200V, VGE=0V Tj=25Â°C Tj=150Â°C	- -	- -	10 2500	ÂµA
Gate -emitter leakage current	IGES	VcE=0V, VGE =Â±20V	-	-	100	nA
Trans conductance	gfs	VCE=20V,Ic=15A	-	15	-	S